• DocumentCode
    1644327
  • Title

    Wet Chemical MESA Etching Using HCl-based and FeCl3 Light Sensitive Etchants for InP Gunn Diodes

  • Author

    Lee, Seong-Dae ; Lee, Jae-Seo ; Kwak, No-Sung ; Kim, Mi-Ra ; Kim, Sam-Dong ; Rhee, Jin-Koo

  • Author_Institution
    Millimeter-wave INnovation Technol. Res. Center (MINT), Dongguk Univ., Seoul
  • fYear
    2008
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    We have fabricated InP Gunn diodes with two different wet chemical etchants for MESA etching and compared the results. In order to make a comparative study, we have used two wet chemical etchants; one was HCl-based etchant (HCl : H3PO4 : H2O = 3:1:2), the other one was FeCl3 light sensitive etchant. It was shown that the fabricated diodes have the currents of 201 and 250 mA, and the breakdown voltage of below 8 V and over 11 V, respectively.
  • Keywords
    Gunn diodes; III-V semiconductors; electric breakdown; etching; indium compounds; iron compounds; FeCl3; Gunn diodes; H2O; H3PO4; HCl; InP; MESA etching; breakdown voltage; light sensitive etchants; wet chemical etchants; Cathodes; Chemical technology; Diodes; Frequency; Gold; Gunn devices; Indium phosphide; Millimeter wave radar; Millimeter wave technology; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Millimeter Waves, 2008. GSMM 2008. Global Symposium on
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-1885-5
  • Electronic_ISBN
    978-1-4244-1886-2
  • Type

    conf

  • DOI
    10.1109/GSMM.2008.4534545
  • Filename
    4534545
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1644327