DocumentCode
1644818
Title
Modeling emitter breakdown in GaAs-based HBTs
Author
Rudolph, M. ; Schnieder, F. ; Heinrich, W.
Author_Institution
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Volume
2
fYear
2003
Firstpage
651
Abstract
Emitter breakdown is commonly ignored in compact HBT models. However, it can have a significant impact on the HBT power performance. The aim of this paper is to present a compact model that accounts for the effect. It is validated by load-pull measurements and applied to investigate the electro-thermal interaction in multi-finger HBTs.
Keywords
III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; semiconductor device breakdown; semiconductor device models; GaAs; GaAs-based HBTs; HBT power cell; HBT power performance; compact model; electro-thermal interaction; emitter breakdown modeling; high voltage HBT; load-pull measurements; multi-finger HBTs; Avalanche breakdown; Base stations; Breakdown voltage; Circuits; Diodes; Electric breakdown; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1212457
Filename
1212457
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