Fabrication of suspended bridge type resonator using laser interference lithography

We report the fabrication method of suspended bridge type nanoelectromechanical system (NEMS) resonator for high quality factor (Q-factor) and increase in resonance frequency beyond the ultra-high frequency (UHF) by laser interference lithography (LIL) using silicon-on-insulator wafer. LIL is capable of a fast nano-patterning over a large area and does not require a mask. In fabricating a suspended bridge type structure, parameter effects such as exposure dosage and the half angle between two incident beams at the intersection were explored. In this paper, successful fabrication of suspended bridge type NEMS resonator is presented using 257nm wavelength laser LIL.