AlGaN/GaN HEMT TCAD simulation and model extraction for RF applications

GaN devices have significant advantages in power density, thermal characteristics, and voltage range over those based on conventional compound semiconductors or Silicon. With GaN, as in other materials systems there are significant advantages in cycle time and strength of design from use of TCAD. Here TCAD simulations of AlGaN/GaN HEMTs are shown to accurately match measured DC and small signal AC data. For large signal RF applications it is necessary to use modeling to extend the application of this TCAD solution. Proprietary models are extracted from TCAD data and demonstrated.