DocumentCode
1645182
Title
A 2GHz voltage tunable FBAR oscillator
Author
Khanna, A.P.S. ; Gane, E. ; Chong, T.
Author_Institution
Wireless Semicond. Div., Agilent Technol. Inc., Santa Clara, CA, USA
Volume
2
fYear
2003
Firstpage
717
Abstract
This paper describes the design and measured performance of a low-noise varactor tuned oscillator based on a film bulk acoustic resonator (FBAR) at 2 GHz. Using varactor tuning, this oscillator demonstrated a 2.5 MHz frequency tuning range at 1985 MHz with a phase noise of -112 dBc/Hz at 10 kHz from the carrier. This represents the first example of a low noise Si-bipolar FBAR tunable oscillator.
Keywords
UHF oscillators; acoustic resonators; bulk acoustic wave devices; circuit noise; circuit simulation; circuit tuning; jitter; phase noise; varactors; 1985 MHz; 2 GHz; Si; UHF voltage tunable FBAR oscillators; film bulk acoustic resonators; frequency tuning range; low jitter clocks; low noise Si-bipolar FBAR tunable oscillators; low-noise varactor tuned oscillators; phase noise; varactor tuning; Ceramics; Clocks; Film bulk acoustic resonators; Phase noise; Resonant frequency; Surface acoustic waves; Tunable circuits and devices; Tuning; Varactors; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1212472
Filename
1212472
Link To Document