DocumentCode
1645294
Title
A Ka-band High Power Frequency Doubler in SMT Package
Author
Nam, Sang-Min ; Traut, Frank ; Cuggino, Joe
Author_Institution
Hittite Microwave Corp., Chelmsford, MA
fYear
2006
Firstpage
61
Lastpage
64
Abstract
This paper describes the development of a packaged Ka-band high power frequency doubler. The frequency doubler MMIC is developed using 0.15mum GaAs p-HEMT technology and packaged into a low cost QFN package for SMT application. This packaged frequency doubler delivers above +22dBm saturated output power of the 2nd harmonic signal with greater than 60dBc rejection of the fundamental and 3rd harmonic signal across the 28 to 30GHz band
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; frequency multipliers; gallium arsenide; integrated circuit packaging; surface mount technology; 0.15 micron; GaAs; Ka-band high power frequency doubler; MMIC; QFN package; SMT package; p-HEMT technology; Costs; Frequency; MMICs; Millimeter wave technology; Packaging; Power generation; Power harmonic filters; Power system harmonics; Surface-mount technology; Transceivers; Frequency doubler; GaAs p-HEMT; Ka-band VSAT; QFN package;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location
San Antonio, TX
Print_ISBN
1-4244-0126-7
Electronic_ISBN
1-4244-0127-5
Type
conf
DOI
10.1109/CSICS.2006.319878
Filename
4109979
Link To Document