• DocumentCode
    1645535
  • Title

    Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs

  • Author

    Lacave, T. ; Chevalier, P. ; Campidelli, Y. ; Buczko, M. ; Depoyan, L. ; Berthier, L. ; Avenier, G. ; Gaquiére, C. ; Chantre, A.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2010
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    This paper summarizes the work carried out on the vertical profile of double-polysilicon SiGe:C HBTs to get fMAX above 400 GHz. The effects of the final spike annealing temperature, the emitter doping species, the base and collector doping levels and the Si capping layer thickness are presented and discussed.
  • Keywords
    annealing; heterojunction bipolar transistors; semiconductor doping; HBT; SiGe:C; base doping level; collector doping level; double polysilicon; emitter doping; heterojunction bipolar transistor; spike annealing temperature; vertical profile optimization; Annealing; Bismuth; Boron; Doping; Resistance; Silicon; Silicon germanium; Heterojunction bipolar transistors (HBT); Nanotechnology; Silicon Germanium (SiGe);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-8578-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.2010.5667965
  • Filename
    5667965
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1645535