• DocumentCode
    1645591
  • Title

    Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology

  • Author

    Delmas, A. ; Gendron, A. ; Bafleur, M. ; Nolhier, N. ; Gill, C.

  • Author_Institution
    Freescale Semiconducteur, Toulouse, France
  • fYear
    2010
  • Firstpage
    253
  • Lastpage
    256
  • Abstract
    Transient voltage overshoots of a high voltage (20 V) ESD clamp based on bipolar transistors in a smart power technology are studied using different TLP pulse conditions (rise time, voltage amplitude). The physical mechanisms involved during the ESD clamp turn-on are thoroughly analyzed by the mean of TCAD simulations, allowing the definition of a set of design guidelines for the overshoot reduction.
  • Keywords
    bipolar transistors; electrostatic discharge; overvoltage protection; power integrated circuits; transients; TLP pulse conditions; bipolar transistors; high voltage ESD protections; smart power technology; transient voltage overshoots; Clamps; Current measurement; Electrostatic discharge; Junctions; Transient analysis; Transmission line measurements; Voltage measurement; Electrostatic discharges (ESD); bipolar simulation; device physics; smart power technologies;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-8578-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.2010.5667967
  • Filename
    5667967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1645591