Deep UV Stepper Based 0.15μm High Power 150mm GaAs pHEMT Process for Millimeter Wave Applications

Author

Lodhi, T. ; McMonagle, J. ; Davis, R.G. ; Brookbanks, D.M. ; Combe, S. ; Clausen, M. ; O´Keefe, M.F. ; Collar, A. ; Atherton, J.S.

Author_Institution

Filtronic Compound Semicond. Ltd., Durham

fYear

2006

Firstpage

125

Lastpage

128

Abstract

Filtronic Compound Semiconductors has developed the first 0.15μm process on 150mm GaAs pHEMT using deep UV stepper based technology for millimeter wave applications. The use of stepper technology allows for improved throughput and yield compared to E-beam lithography. The process has an F_T of 85GHz with breakdown voltage of 15V and is ideally suited for power applications up to 40GHz. The pHEMTs have demonstrated output power of more than 1W/mm that to our knowledge is the highest reported power from a 0.15μm GaAs pHEMT process

Keywords

III-V semiconductors; electron beam lithography; gallium arsenide; high electron mobility transistors; millimetre wave field effect transistors; semiconductor device breakdown; 0.15 micron; 15 V; 150 mm; 85 GHz; Filtronic Compound Semiconductors; GaAs; MMIC; breakdown voltage; deep UV stepper technology; electron beam lithography; millimeter wave applications; pHEMT; Costs; Gallium arsenide; Lithography; Manufacturing processes; Millimeter wave technology; PHEMTs; Resistors; Space technology; Substrates; Throughput; 0.15Â¿m; MMIC; Manufacturing; Millimeter Wave; Stepper; pHEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Conference_Location

San Antonio, TX

Print_ISBN

1-4244-0126-7

Electronic_ISBN

1-4244-0127-5

Type

conf

DOI

10.1109/CSICS.2006.319919

Filename

4109997