DocumentCode
1646105
Title
A 0.16 /spl mu/m modular BiCMOS (COM2-BiCMOS) technology for RF communication ICs
Author
Carroll, M.S. ; Ivanov, T.G. ; Yih-Feng Chyan ; Nguyen, D.P. ; Chunchieh Huang ; Ting-Ih Hsu ; Chung Wai Leung ; Cochran, W.T.
Author_Institution
Lucent Technol., Bell Labs., Orlando, FL, USA
fYear
1999
Firstpage
857
Lastpage
860
Abstract
A 0.16 /spl mu/m modular BiCMOS technology (COM2-BiCMOS) has been developed for radio-frequency communication ICs. The technology includes a low-cost, high-performance, single-poly NPN bipolar transistor with f/sub T/=45 GHz and BV/sub CEO/=4.0 V. With a f/sub T/BV/sub CEO/ product of 180 GHz-V, the bipolar transistor performance in COM2-BiCMOS is comparable to many double-poly Si or SiGe transistors without the additional process complexity and cost.
Keywords
BiCMOS integrated circuits; UHF integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; telecommunication equipment; 0.16 micron; COM2-BiCMOS; RF communication ICs; modular BiCMOS technology; radiofrequency ICs; single-poly NPN bipolar transistor; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Communications technology; Costs; Implants; Ion implantation; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5410-9
Type
conf
DOI
10.1109/IEDM.1999.824284
Filename
824284
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