75 GHz 80 mW InP DHBT power amplifier

Author

Yun Wei ; Urteaga, M. ; Griffith, Z. ; Scott, D. ; Shouxuan Xie ; Paidi, V. ; Parthasarathy, N. ; Rodwell, M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

2

fYear

2003

Firstpage

919

Abstract

We report a 75 GHz MMIC power amplifier in InP/InGaAs/InP DHBT transferred-substrate technology. The amplifier has 256 /spl mu/m/sup 2/ total emitter area and exhibits a power gain of 5.5 dB at 75 GHz and a saturated output power of 19 dBm (80mW) under 1-dB gain compression. The DHBT employed by the amplifier has a lightly doped InP emitter epitaxial layer between the emitter and the emitter cap layer as a distributed ballast resistance to improve thermal stability. To our knowledge, this is the highest reported output power for a W-band HBT power amplifier.

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MIMIC; circuit stability; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; 5.5 dB; 75 GHz; 80 mW; DHBT; InP-InGaAs-InP; InP/InGaAs/InP; MMIC power amplifier; W-band; distributed ballast resistance; emitter area; emitter cap layer; gain compression; lightly doped epitaxial layer; power gain; saturated output power; thermal stability; transferred-substrate technology; Distributed amplifiers; Electronic ballasts; Epitaxial layers; Gain; Indium gallium arsenide; Indium phosphide; MMICs; Power amplifiers; Power generation; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212519

Filename

1212519