• DocumentCode
    164655
  • Title

    Examination of influence of electrical stress on parameters of PP film capacitors

  • Author

    Mach, P. ; Horak, Martin

  • Author_Institution
    Dept. of Electrotechnol., Czech Tech. Univ. in Prague, Prague, Czech Republic
  • fYear
    2014
  • fDate
    23-26 Oct. 2014
  • Firstpage
    51
  • Lastpage
    54
  • Abstract
    Properties of polypropylene film capacitors, which are usually used in power electronics equipment, were examined after two-level process of electrical loading. Capacitors with the value of 10 nF and nominal voltage 630 V DC, 300 V AC, were loaded by the AC voltage with the frequency of 50 Hz in following steps: the voltage 450 V was applied for 30 min at first and consequently the voltage 500 V for 60 min. With regard to the values of the voltages applied a self-healing process occurred. The impedance of the capacitors was measured in the frequency range of 15 MHz-20 MHz, the capacitance and loss factor in the frequency range of 300 Hz-1 MHz. The changes of these parameters caused by electrical stress of the capacitors were examined. It was found that the capacitance decreases due to the decrease of the electrodes area caused by the self-healing process of the capacitors. Small changes only of the loss factor and impedance of the capacitors caused by ageing under electrical stress were found.
  • Keywords
    ageing; capacitors; power electronics; AC voltage; PP film capacitors; capacitance 10 nF; electrical loading; electrical stress; frequency 15 MHz to 20 MHz; frequency 300 Hz to 1 MHz; frequency 50 Hz; loss factor; polypropylene film capacitors; power electronics equipment; self-healing process; voltage 300 V; voltage 630 V; Aging; Capacitance; Capacitors; Degradation; Electrodes; Films; Impedance; Polypropylene film capacitors; VA characteristic nonlinearity; self-healing process; third harmonics measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design and Technology in Electronic Packaging (SIITME), 2014 IEEE 20th International Symposium for
  • Conference_Location
    Bucharest
  • Type

    conf

  • DOI
    10.1109/SIITME.2014.6966993
  • Filename
    6966993