Improvement of thermal properties in epitaxial aluminum nitride pedestal microring

Author

Xianwen Liu ; Changzheng Sun ; Bing Xiong ; Zhibiao Hao ; Yanjun Han ; Jian Wang ; Lai Wang ; Yi Luo

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

fYear

2015

Firstpage

1

Lastpage

3

Abstract

We report thermal properties improvement of aluminum nitride (AlN) microring resonator by adopting epitaxial material and pedestal structure. With optimized inductively coupled plasma (ICP) dry etching using Cl₂/BCl₃/Ar mixture, pedestal microring resonators have been fabricated on epitaxial AlN. Transmission measurement reveals a loaded quality factor of ~1×10⁴ at under-coupled condition, corresponding to a propagation loss of 27 dB/cm around 1.55 μm. Thermal effect induced resonant peak shift at different coupled powers is 6.3 pm/mW, and optical bistability can be observed at an input power above ~115 mW.

Keywords

Q-factor; aluminium compounds; argon; boron compounds; chlorine; epitaxial growth; microcavities; microcavity lasers; optical bistability; optical losses; thermal analysis; AlN-Cl₂-BCl₃-Ar; epitaxial layer; epitaxial material; inductively coupled plasma; loaded quality factor; optical bistability; optimized ICP dry etching; pedestal microring resonator; pedestal structure; propagation loss; resonant peak shift; thermal effect; thermal properties improvement; transmission measurement; Aluminum nitride; Epitaxial growth; III-V semiconductor materials; Integrated optics; Nonlinear optics; Optical bistability; Optical resonators; Epitaxial AlN; ICP dry etching; pedestal microring; thermal properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communications and Networks (ICOCN), 2015 14th International Conference on

Conference_Location

Nanjing

Type

conf

DOI

10.1109/ICOCN.2015.7203683

Filename

7203683