Body-biased complementary logic implemented using AlN piezoelectric MEMS switches

Author

Sinha, Nipun ; Jones, Timothy S. ; Guo, Zhijun ; Piazza, Gianluca

Author_Institution

Dept. of Mech. Eng. & Appl. Mech., Univ. of Pennsylvania, Philadelphia, PA, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

This paper reports on the first implementation of low voltage complementary logic (Â¿ 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an n-type and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of a switch. The AlN MEMS switches have shown extremely small subthreshold slopes and threshold voltages as low as 0.8 mV/dec and 30 mV, respectively. Furthermore, this work presents a fully mechanical body-biased inverter formed by two AlN MEMS switches operating at 100 Hz with a Â± 1.5 V voltage swing.

Keywords

III-V semiconductors; aluminium compounds; logic devices; microswitches; piezoelectric devices; wide band gap semiconductors; AlN; body biased complementary logic; low voltage complementary logic; opposite body bias; piezoelectric MEMS switches; Air gaps; CMOS logic circuits; Inverters; Logic devices; Low voltage; MOSFETs; Micromechanical devices; Microswitches; Power semiconductor switches; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424215

Filename

5424215