Rigorous analysis of traveling wave photodetectors under high-power illumination

Author

Pasalic, D. ; Vahldieck, R. ; Aste, A.

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

2

fYear

2003

Firstpage

1375

Abstract

An efficient hybrid method for the rigorous analysis of traveling-wave photodetectors (TWPDs) is presented. The method consists of a combination of the 2D drift-diffusion based semiconductor simulation in conjunction with a full-wave EM analysis of the overall structure. While the 2D simulation determines the conductivity profile of the semiconductor layers under illuminations of different optical power levels, the 3D simulation characterizes the corresponding RF performance of the TWPD. Comparison with available experimental data has shown excellent agreement.

Keywords

electrical conductivity; electromagnetic field theory; microwave photonics; optical fibre communication; optical receivers; photodetectors; semiconductor device models; 2D drift-diffusion based semiconductor simulation; 2D simulation; 3D simulation; RF performance; TWPD; conductivity profile; full-wave EM analysis; high-power illumination; hybrid method analysis; illumination optical power levels; microwave fiber optic links; semiconductor layers; traveling-wave photodetectors; Analytical models; Circuit simulation; Conductivity; Lighting; Microwave devices; Optical waveguides; Performance analysis; Photodetectors; Radio frequency; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212627

Filename

1212627