Temperature compensation of silicon micromechanical resonators via degenerate doping

Author

Samarao, Ashwin K. ; Ayazi, Farrokh

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

We report on the degenerate doping of a silicon resonator as a new method for reducing its temperature coefficient of frequency (TCF). This is the first TCF reduction technique reported till date that takes advantage of free charge carrier effects on the elastic constants of silicon. The TCF of silicon bulk acoustic resonators (SiBAR) are reduced from -29 ppm/Â°C to -1.5 ppm/Â°C on 5 Â¿m thick devices using degenerate boron doping and to -2.72 ppm/Â°C on 20 Â¿m thick devices using boron-assisted aluminum doping while maintaining a high quality factor (Q) of 28000 in vacuum.

Keywords

acoustic resonators; boron; bulk acoustic wave devices; compensation; elastic constants; elemental semiconductors; micromechanical resonators; semiconductor doping; silicon; Si:B; bulk acoustic resonator; degenerate doping; elastic constant; free charge carrier effect; micromechanical resonator; size 20 mum; size 5 mum; temperature coefficient of frequency reduction; temperature compensation; Acoustic devices; Aluminum; Boron; Charge carriers; Doping; Frequency; Micromechanical devices; Q factor; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424221

Filename

5424221