Resolving fast VTH transients after program/erase of flash memory stacks and their relation to electron and hole defects

Author

Toledano-Luque, M. ; Degraeve, R. ; Zahid, M.B. ; Kaczer, B. ; Kittl, J. ; Jurczak, M. ; Groeseneken, G. ; Van Houdt, J.

Author_Institution

Dipt. Fis. Aplic. III, Univ. Complutense de Madrid, Madrid, Spain

fYear

2009

Firstpage

1

Lastpage

4

Abstract

A new fast technique is developed to investigate the short term post program and erase discharge of flash memory devices with high-k dielectrics. The procedure is based on fast V_TH-evaluation methods developed for NBTI and provides the transient characteristics after 20 ms under program or erase conditions. The post program and erase curves provide useful information on the dielectric properties and are used as a fast screening technique for alternative materials.

Keywords

electron traps; flash memories; high-k dielectric thin films; hole traps; transients; NBTI; V_TH transients; V_TH-evaluation methods; dielectric property; electron defects; flash memory devices; flash memory stacks; high-k dielectrics; hole defects; program/erase; transient characteristics; Aluminum oxide; Character generation; Charge carrier processes; Dielectric measurements; Electron traps; Energy states; Flash memory; High K dielectric materials; High-K gate dielectrics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424232

Filename

5424232