Compact modeling of flicker noise variability in small size MOSFETs

Author

Morshed, Tanvir H. ; Dunga, Mohan V. ; Zhang, Jodie ; Lu, Darsen D. ; Niknejad, Ali M. ; Hu, Chenming

Author_Institution

Dept. of EECS, Univ. of California, Berkeley, CA, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

A compact model has been developed to capture the variability of flicker noise resulting from the reduction in size of state of the art MOSFETs. The underlying physics of flicker noise in small area MOSFETs has been verified by two means: Monte Carlo simulation and analytic modeling. The statistical distribution of flicker noise is reported for the first time, supported by experimental data from two sets of devices with different areas. The developed model is capable of predicting the area dependence of noise at any frequency at desired %Yield.

Keywords

MOSFET; Monte Carlo methods; flicker noise; semiconductor device models; semiconductor device noise; statistical distributions; MOSFET; Monte Carlo simulation; analytic modeling; compact modeling; flicker noise variability; statistical distribution; 1f noise; Circuit noise; Frequency; Low-frequency noise; MOSFETs; Noise shaping; Predictive models; Semiconductor device modeling; Semiconductor device noise; Statistical distributions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424237

Filename

5424237