• DocumentCode
    1649733
  • Title

    Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions

  • Author

    Wirth, Gilson ; Da Silva, Roberto ; Srinivasan, Purushothaman ; Krick, John ; Brederlow, Ralf

  • Author_Institution
    Electr. Eng., UFRGS, Porto Alegre, Brazil
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A statistical model for the low-frequency (LF) noise behavior of MOSFETs under cyclo-stationary excitation is presented. The model is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. Good agreement between experimental data, Monte Carlo simulations and model is demonstrated.
  • Keywords
    MOSFET; semiconductor device models; semiconductor device noise; statistics; MOSFET; Monte Carlo simulations; cyclostationary excitation; low-frequency noise; statistical model; Low-frequency noise; MOSFET circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424240
  • Filename
    5424240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1649733