GaAs MMICs for EHF SATCOM ground terminals

Author

Hampel, Daniel ; Upton, Alastair

Author_Institution

GE/RCA Gov. Commun. Syst., Camden, NJ, USA

fYear

1988

Firstpage

737

Abstract

The authors address the potential uses of GaAs, MMICs, and their benefits, for EHF ground terminals. This assessment of GaAs MMICs (monolithic microwave integrated circuits), while concentrating on the analog RF front end, also includes some associated critical digital functions. Performance requirements and specific application areas, such as 20-GHz low-noise amplifiers and 44-GHz power amplifiers, are discussed and current state-of-the-art performance in low-noise high-electron-mobility transistors (HEMTs) and high efficiency pseudomorphic HEMTs is presented, along with projected performance improvements over the next five years.<>

Keywords

MMIC; gallium arsenide; military equipment; satellite ground stations; 20 GHz; 44 GHz; EHF SATCOM ground terminals; GaAs; HEMTs; MMICs; analog RF front end; high-electron-mobility transistors; low-noise amplifiers; military equipment; monolithic microwave integrated circuits; power amplifiers; satellite ground stations; Analog integrated circuits; Digital integrated circuits; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Radiofrequency integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Military Communications Conference, 1988. MILCOM 88, Conference record. 21st Century Military Communications - What's Possible? 1988 IEEE

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/MILCOM.1988.13473

Filename

13473