DocumentCode
1650616
Title
Interaction between electrostatic discharge and electromigration on copper interconnects for advanced CMOS technologies
Author
Kontos, Dimitris K. ; Gauthier, Robert ; Ioannou, Dimitris E. ; Lee, Tom ; Woo, Min ; Chatty, Kiran ; Putnam, Cynthia ; Muhammad, Mujahid
Author_Institution
George Mason Univ., Fairfax, VA, USA
fYear
2005
Firstpage
91
Lastpage
97
Keywords
CMOS integrated circuits; copper; electromigration; electrostatic discharge; failure analysis; integrated circuit interconnections; integrated circuit reliability; thermal diffusion; 1.5 ns; 1084 degC; CMOS interconnects; Cu; EM stress applied current; ESD/electromigration interaction; Joule heating; TLP width dependence; Wunch-Bell like curve nonsharp transitions; adiabatic region; electrostatic discharge; failure analysis; metal line EOL; metal line critical temperature; metal line melting point; steady state region; thermal diffusion region; transmission line pulse stress; wafer temperature; CMOS technology; Conductivity; Copper; Electrical resistance measurement; Electromigration; Electrostatic discharge; Integrated circuit interconnections; Protection; Stress; Transmission line theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493069
Filename
1493069
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