Physical insights on graphene nanoribbon mobility through atomistic simulations

We present an investigation of the main mechanisms which limit mobility in GNR-FETs, by means of atomistic simulations based on the NEGF formalism. In particular, we focus on i) line edge roughness (LER), ii) single defects; iii) ionized impurities, iv) acoustic and optical phonons. Results show that the effect of ionized impurities is negligible, while phonons, LER and defects largely limits carrier mobility, especially for narrower GNRs.