DocumentCode
1650952
Title
A case study on the application of real phase-change RAM to main memory subsystem
Author
Kwon, Suknam ; Kim, Dongki ; Kim, Youngsik ; Yoo, Sungjoo ; Lee, Sunggu
Author_Institution
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
fYear
2012
Firstpage
264
Lastpage
267
Abstract
Phase-change RAM (PCM) has the advantages of better scaling and non-volatility compared with the DRAM which is expected to face its scaling limit in the near future. There have been many studies on applying the PCM to main memory in order to complement or replace the DRAM. One common limitation of these studies is that they are based on synthetic PCM models. In our study, we investigate the feasibility and issues of applying a real PCM to main memory. In this paper, we report our case study of characterizing the PCM and evaluating its usefulness in the main memory. Our results show that the PCM/DRAM hybrid main memory with a modest DRAM size can give comparable performance to that of the DRAM only main memory. However, the hybrid memory with small DRAMs or large footprint programs can suffer from performance degradation due to the long latency of both PCM writes and write preemption penalty, which requires architectural innovations for exploiting the full potential of PCM write performance.
Keywords
DRAM chips; phase change memories; DRAM size; PCM write performance; PCM writes; architectural innovations; footprint programs; hybrid main memory; main memory subsystem; performance degradation; real phase-change RAM; scaling limit; synthetic PCM models; write preemption penalty; Memory management; Phase change materials; Phase change random access memory; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2012
Conference_Location
Dresden
ISSN
1530-1591
Print_ISBN
978-1-4577-2145-8
Type
conf
DOI
10.1109/DATE.2012.6176474
Filename
6176474
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