CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack

Author

Peng, J.W. ; Singh, N. ; Lo, G.Q. ; Kwong, D.L. ; Lee, S.J.

Author_Institution

Inst. of Microelectron., A*STAR, Singapore, Singapore

fYear

2009

Firstpage

1

Lastpage

4

Abstract

Ge/Si core/shell gate-all-round nanowire pMOSFET integrated with HfO₂/TaN gate stack is demonstrated using fully CMOS compatible process. Devices with 100 nm gate length achieved high I_ON of ~946 Â¿A/Â¿m at V_G - V_T = -0.7 V and V_DS = -1 V and on/off ratio of 10⁴ with decent subthreshold behavior. Significant improvement in hole mobility and ballistic efficiency is demonstrated as a result of core/shell channel architecture.

Keywords

CMOS integrated circuits; Ge-Si alloys; MOSFET; CMOS compatible process; HfO₂-TaN; ballistic efficiency; complementary metal-oxide-semiconductor; core channel architecture; gate stack; hole mobility; metal oxide semiconductor field effect transistors; nanowire gate; pMOSFET; shell channel architecture; size 100 nm; voltage -1 V; voltage 0.7 V; Dry etching; Fabrication; Hafnium oxide; MOSFET circuits; Oxidation; Plasma applications; Polymers; Rapid thermal processing; Resists; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424284

Filename

5424284