• DocumentCode
    1651078
  • Title

    Heterogeneous integration of III-V on Si: Overcoming the lattice-mismatch barrier via the 1D route

  • Author

    Shin, Jae Cheol ; Mohseni, Parsian ; Tomasulo, Stephanie ; Montgomery, Kyle ; Lee, Minjoo ; Li, Xiuling

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate one-dimensional heteroepitaxy of InxGa1-xAs nanowires in the entire composition range on silicon substrates without dislocations. Doping and interfaces are characterized. Applications including improving the silicon solar cell efficiency will be presented.
  • Keywords
    doping; epitaxial growth; gallium arsenide; indium compounds; nanowires; solar cells; ternary semiconductors; 1D heteroepitaxy nanowires; InGaAs; Si; epitaxial growth; heterogeneous integration; lattice mismatch barrier; silicon solar cell efficiency; Arrays; Indium gallium arsenide; Nanowires; Photonic band gap; Photovoltaic cells; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6325563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651078