• DocumentCode
    1651292
  • Title

    Bake enhanced erratic behavior in gate stress characteristics in flash memories

  • Author

    Tao, Guoqiao ; Scarpa, Andrea ; van Marwijk, L. ; Dormans, D.

  • Author_Institution
    Philips Semicond., Nijmegen, Netherlands
  • fYear
    2005
  • Firstpage
    246
  • Lastpage
    249
  • Keywords
    flash memories; semiconductor device reliability; stress effects; bake enhanced erratic behavior; erased state; flash memories; gate disturbance; gate stress characteristics; positive centers; process induced mobile ions; programmed state; tail distribution; tunnel oxide; Data analysis; Degradation; Electronic mail; Filters; Nonvolatile memory; Performance analysis; Performance evaluation; Probability distribution; Stress measurement; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493092
  • Filename
    1493092
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651292