• DocumentCode
    1651367
  • Title

    0.9µm pitch pixel CMOS image sensor design methodology

  • Author

    Itonaga, Kazuichiroh ; Mizuta, Kyohei ; Kataoka, Toyotaka ; Yanagita, Masashi ; Yamauchi, Shintaro ; Ikeda, Harumi ; Haruta, Tsutomu ; Matsumoto, Shizunori ; Harasawa, Masanori ; Matsuda, Takeshi ; Matsumoto, Akira ; Mizuno, Ikue ; Kameshima, Takatoshi ;

  • Author_Institution
    Semicond. Bus. Group, Sony Corp., Kanagawa, Japan
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We demonstrate the first ever 0.9μm pitch pixel CMOS image sensor (CIS), and reveal the problems that are likely to be encountered in future device structures. We have developed a set of guidelines for the design of high quantum efficiency(QE) CISs, and verified their validity by comparing the image quality of 0.9, 1.12, 1.4 and 1.75μm CISs. Furthermore, we propose a simple methodology to optimize more complicated submicron pitch CIS structures.
  • Keywords
    CMOS image sensors; semiconductor device models; CMOS image sensor design; quantum efficiency; submicron pitch CIS structure; CMOS image sensors; Design methodology; Pixel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424299
  • Filename
    5424299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651367