Modeling of stress-retarded orientation-dependent oxidation: shape engineering of silicon nanowire channels

Author

Ma, F.-J. ; Rustagi, S.C. ; Zhao, H. ; Samudra, G.S. ; Singh, N. ; Budhaaraju, K.D. ; Lo, G.Q. ; Kwong, D.L.

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2009

Firstpage

1

Lastpage

4

Abstract

A new universal stress retardation parameter set is successful to account for initial oxidation rate enhancement, orientation-dependent retardation and self-limiting phenomena observed in the dry oxidation experiment of the silicon FIN nanostructures over a wide temperature range. This stress-retarded orientation-dependent model was proved to be trustworthy in shape engineering of silicon nanowire channels.

Keywords

CMOS integrated circuits; elemental semiconductors; nanowires; silicon; Si; oxidation rate enhancement; shape engineering; silicon FIN nanostructures; silicon nanowire channels; stress-retarded orientation-dependent oxidation modelling; universal stress retardation parameter set; Nanoscale devices; Nanostructures; Oxidation; Predictive models; Semiconductor device modeling; Shape; Silicon; Stress; Temperature; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424306

Filename

5424306