Nonlinear dynamics approach in modeling of the on-state-spreading - related voltage and current transients in 90nm CMOS silicon controlled rectifiers

Author

Pogany, D. ; Johnsson, D. ; Bychikhin, S. ; Esmark, K. ; Rodin, P. ; Gornik, E. ; Stecher, M. ; Gossner, H.

Author_Institution

Inst. for Solid State Electron., Vienna Univ. of Technol., Vienna, Austria

fYear

2009

Firstpage

1

Lastpage

4

Abstract

Using a theory of front propagation in nonlinear active media we model the on-state spreading related voltage, current and on-state width transients in 90 nm CMOS silicon controlled rectifiers. The model explains well voltage transients during the rising edge of ESD pulses and predicts a non-trivial dependence of device voltage on number of triggering regions.

Keywords

CMOS integrated circuits; electrostatic discharge; nonlinear dynamical systems; rectifiers; semiconductor device models; silicon; transients; CMOS silicon controlled rectifiers; ESD pulses; Si; current transients; front propagation theory; nonlinear dynamics; on-state spreading related voltage; on-state width transients; size 90 nm; CMOS technology; Current density; Electrostatic discharge; Electrostatic interference; Power system transients; Protection; Semiconductor device modeling; Solid modeling; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424308

Filename

5424308