• DocumentCode
    1651704
  • Title

    Hot carrier generation and reliability of BT(body-tied)-fin type SRAM cell transistors (Wfin=20~70nm)

  • Author

    Ahn, Young Joon ; Cho, Hye Jin ; Kang, Hee Soo ; Lee, Choong-Ho ; Lee, Chul ; Yoon, Jae-Man ; Kim, Tae Yong ; Cho, Eun Suk ; Sung, Suk-Kang ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-II

  • Author_Institution
    R&D Center, Samsung Electron. Co., Gyeonggi-Do, South Korea
  • fYear
    2005
  • Firstpage
    352
  • Lastpage
    355
  • Keywords
    MOSFET; SRAM chips; hot carriers; semiconductor device reliability; 20 to 70 nm; 50 nm; SRAM cell transistors; body-tied-FinFET; fin type MOSFET; fin width; hot carrier generation; hot carrier generation mechanism; hot carrier immunity; hot carrier reliability; Breakdown voltage; Charge measurement; Current measurement; Fabrication; FinFETs; Hot carriers; Immune system; MOSFETs; Random access memory; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493111
  • Filename
    1493111
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651704