• DocumentCode
    1652676
  • Title

    Electron trapping and interface trap generation in drain extended pMOS transistors

  • Author

    Moens, P. ; Bauwens, F. ; Nelson, M. ; Tack, M.

  • Author_Institution
    AMI Semicond. Belgium BVBA, Oudenaarde, Belgium
  • fYear
    2005
  • Firstpage
    555
  • Lastpage
    559
  • Keywords
    MOSFET; charge injection; electron traps; hot carriers; interface states; DeMOS; charge pumping; drain extended PMOS transistors; electron injection; electron trapping; hot carrier stress; interface trap generation; medium voltage transistors; p-type lateral drain extended MOS; spacer oxide interface trap formation; specific on-resistance degradation; Automotive engineering; Batteries; Charge pumps; Degradation; Electron traps; Hot carriers; MOSFETs; Stress; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493147
  • Filename
    1493147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652676