Eliminating parasitic resistances in parameter extraction of semiconductor device models

A network theorem based on potential functions is used for the purpose of cancelling the detrimental effect that the presence of parasitic linear elements has on procedures used for extracting the intrinsic-model parameters of semiconductor devices. The method is based on the use of an auxiliary function: the difference between the content and the co-content functions of the device. The theorem states that, for any arbitrarily connected network of linear and nonlinear branch elements, the summation of the difference functions of each of the branches is zero, and that this difference function is zero at any branch represented by a linear I-V characteristic. In establishing this theorem we also show that: (a) the summation of the contents, over all the branches, is zero; and (b) the summation of the co-contents, over all the branches, is zero. To illustrate the procedure the intrinsic model parameters of a real p-n junction are extracted using this idea