• DocumentCode
    1653600
  • Title

    Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric

  • Author

    Park, H. ; Rahman, M.S. ; Chang, M. ; Lee, B.H. ; Gardner, M. ; Young, D. ; Hwang, H.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea
  • fYear
    2005
  • Firstpage
    646
  • Lastpage
    647
  • Keywords
    MOSFET; annealing; deuterium; dielectric thin films; hot carriers; hydrogen; interface states; passivation; semiconductor device reliability; 1 atm; 100 atm; 400 degC; 5 to 20 atm; D2; H2; HfSiON; MOSFET electrical characteristics; high pressure deuterium annealing; high-k gate dielectrics; high-pressure annealing; hot carrier lifetime; interface state passivation; linear drain current; maximum transconductance; nMOSFET reliability; Annealing; Degradation; Deuterium; Dielectrics; Hydrogen; Interface states; MOSFET circuits; Materials science and technology; Tin; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493185
  • Filename
    1493185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653600