• DocumentCode
    1653747
  • Title

    Degradation of electromigration lifetime by post-annealing for CU/low-K interconnects

  • Author

    Kakuhara, Y. ; Ueno, K.

  • Author_Institution
    Adv. Device Dev. Div., NEC Electron. Corp., Sagamihara, Japan
  • fYear
    2005
  • Firstpage
    656
  • Lastpage
    657
  • Keywords
    annealing; copper; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; 130 nm; Cu; Cu/low-k interconnects; LSI; electromigration lifetime degradation; electromigration reliability; multilevel interconnect fabrication; post-plating annealing; total thermal processes; Annealing; Ceramics; Dielectrics; Electromigration; Electronic packaging thermal management; Fabrication; Life testing; National electric code; Performance evaluation; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493190
  • Filename
    1493190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653747