DocumentCode
1653962
Title
Effect of STI shape and tunneling oxide thinning on cell VTH variation in the flash memory
Author
Lee, JaiDong ; Kim, JungHwan ; Lee, Woong ; Lee, Sanghoon ; Lim, HunYoung ; Lee, Jaeduk ; Nam, Seokwoo ; Lee, HyeonDeok ; Yong, Chang
Author_Institution
Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin, South Korea
fYear
2005
Firstpage
670
Lastpage
671
Keywords
electric current; electric potential; flash memories; isolation technology; oxidation; tunnelling; activation energy; cell threshold voltage variation; erase operation; floating gate flash memory; oxidation process; program operation; shallow trench isolation shape; tunnel oxide thickness; tunnel oxide thinning; tunneling oxide thinning; uncontrolled gate current; Fabrication; Flash memory; Flash memory cells; Length measurement; Medical simulation; Oxidation; Plasmas; Shape; Space exploration; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493197
Filename
1493197
Link To Document