• DocumentCode
    1654020
  • Title

    Power MOSFETs, IGBTs, and thyristors in SiC: Optimization, experimental results, and theoretical performance

  • Author

    Cooper, J.A. ; Tamaki, T. ; Walden, G.G. ; Sui, Y. ; Wang, S.R. ; Wang, X.

  • Author_Institution
    Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper we present recent experimental results on SiC MOSFETs, IGBTs, and thyristors, and propose a consistent methodology for comparing unipolar and bipolar power devices as a function of blocking voltage and switching frequency.
  • Keywords
    insulated gate bipolar transistors; power MOSFET; silicon compounds; thyristors; wide band gap semiconductors; SiC; blocking voltage; insulated gate bipolar transistors; power MOSFET; switching frequency; thyristors; Current density; Insulated gate bipolar transistors; MOSFETs; Performance loss; Power dissipation; Silicon carbide; Substrates; Switching frequency; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424401
  • Filename
    5424401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1654020