A planar MOS-gated AC switch structure

This paper reports the first discrete high-voltage vertical MOS-gate controlled AC switch structure which exhibits gate-controlled current saturation in the first and third operating quadrants. The anode current can be switched on and off within each quadrant of operation by application of appropriate gate bias. The proposed structure was simulated, designed and fabricated to achieve bi-directional blocking voltage of 3.5 kV and exhibit FBSOA in the first and third quadrants with low on-state voltage drop. Thus, the operation of proposed AC switch has been theoretically and experimentally confirmed