DocumentCode
1654544
Title
Electron transport properties in InAs self-assembled quantum dot HEMTs
Author
Horiguchi, N. ; Futatsugi, T. ; Nakata, Y. ; Yokoyama, N.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1995
Firstpage
371
Lastpage
374
Abstract
In this paper we propose InAs self-assembled quantum dot high electron mobility transistors (HEMTs) to investigate the electron transport properties in InAs self-assembled quantum dots. We measured the Vgs-Id characteristics, their temperature dependence and the Vds-Id characteristics. The experimental results show that the resonant tunneling via the quantum levels of InAs self-assembled quantum dots is modified by their charging energy
Keywords
III-V semiconductors; carrier density; carrier mobility; high electron mobility transistors; indium compounds; quantum interference devices; semiconductor quantum dots; tunnelling; InAs; Vds-Id characteristics; Vgs-Id characteristics; charging energy; electron transport properties; high electron mobility transistor; resonant tunneling; self-assembled quantum dot HEMTs; temperature dependence; Assembly; Crystalline materials; Electrons; Gallium arsenide; HEMTs; MODFETs; Optical materials; Quantum dots; Resonant tunneling devices; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499217
Filename
499217
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