DocumentCode
165501
Title
Dynamic Terahertz switch based on waveguide-cavity-waveguide (WCW) structure
Author
Aghadjani, Mahdi ; Mazumder, Prasenjit
Author_Institution
Dept. of Electr. Eng. & Comput. Sci. (EECS), Univ. of Michigan, Ann Arbor, MI, USA
fYear
2014
fDate
18-21 Aug. 2014
Firstpage
917
Lastpage
920
Abstract
In this brief, a THz switch consisting of GaAs dielectric slab waveguide with periodic perfect conductor patches on its top and bottom is demonstrated. The performance is based on waveguide-cavity-waveguide structure. By pumping optical signal into the slab waveguide and changing the carrier density of semiconductor directly underneath the patches, and modulating the refractive index of GaAs dielectric it switches between on-state and off-state.
Keywords
III-V semiconductors; carrier density; dielectric waveguides; gallium arsenide; microwave switches; GaAs; GaAs dielectric slab waveguide; THz switch; WCW structure; carrier density; dynamic terahertz switch; optical signal; periodic perfect conductor patches; refractive index; waveguide-cavity-waveguide structure; Electronic mail; Electrooptical waveguides; IP networks; Indexes; Optical switches; Permittivity; Optical pumping; THz; cavity; free carrier concentration;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location
Toronto, ON
Type
conf
DOI
10.1109/NANO.2014.6967996
Filename
6967996
Link To Document