• DocumentCode
    1655089
  • Title

    Engineering of plasmonic effects in photodetectors and high-efficiency photovoltaics

  • Author

    Yu, Edward T.

  • Author_Institution
    Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2010
  • Firstpage
    42
  • Lastpage
    43
  • Abstract
    Integration of metal and dielectric nanostructures with semiconductor-based devices offers new opportunities for engineering the performance of high-efficiency photovoltaics and of photodetectors generally. We discuss here approaches in which plasmonic and related scattering effects are exploited to enable efficient coupling of photons into optical waveguide modes of semiconductor photodetector and photovoltaic devices. These approaches enable realization of improved power conversion efficiency in quantum-well solar cells, potentially leading to efficiencies in excess of the Shockley-Queisser single-homojunction limit, and to engineer the wavelength response of silicon-based photodetector structures using lithographically patterned metal scattering structures.
  • Keywords
    lithography; optical waveguides; photodetectors; plasmonics; quantum well devices; semiconductor devices; semiconductor quantum wells; silicon-on-insulator; solar cells; Shockley-Queisser single-homojunction limit; dielectric nanostructures; high-efficiency photovoltaics; lithographically patterned metal scattering structures; metal nanostructures; optical waveguide modes; photon coupling; plasmonic effects; power conversion efficiency; quantum-well solar cells; semiconductor photodetector; semiconductor-based devices; silicon-on-insulator photodetector structures; Dielectric devices; Optical coupling; Optical scattering; Optical waveguides; Particle scattering; Photodetectors; Photovoltaic cells; Plasmons; Power engineering and energy; Semiconductor nanostructures;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424447
  • Filename
    5424447