• DocumentCode
    1655708
  • Title

    Epitaxial growth of CoSi2 by Co/Ti/Si solid phase reaction and its application in salicide technology

  • Author

    Li, Bing-Zong ; Wu, Wei-Jun ; Shao, Kai ; Fang, Hua ; Gu, Zhi-Guang ; Jiang, Guo-Bao ; Huang, Wei-Ning

  • Author_Institution
    Dept. of Electron. Eng., Fudan Univ., Shanghai, China
  • fYear
    1995
  • Firstpage
    29
  • Lastpage
    34
  • Abstract
    Co/Ti/Si ternary solid phase interaction is a new method of CoSi 2/Si hetero-epitaxy. The experimental results on Co/Ti/Si solid state interaction behavior, epitaxial growth of CoSi2 on Si substrate, self-aligned silicidation of source/drain contact and polysilicon gate by Co/Ti/Si solid phase reaction, and applications of the new salicide technology in device fabrication are described and discussed
  • Keywords
    ULSI; VLSI; cobalt compounds; integrated circuit interconnections; integrated circuit metallisation; solid phase epitaxial growth; CoSi2-Si; Si; device fabrication; heteroepitaxial growth; polysilicon gate; salicide technology; self-aligned silicidation; solid phase reaction; solid state interaction; source/drain contact; CMOS technology; Conductivity; Epitaxial growth; Fabrication; Molecular beam epitaxial growth; Semiconductor films; Silicidation; Silicides; Solid state circuits; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.499262
  • Filename
    499262
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1655708