DocumentCode
1656095
Title
Performance of TFR filters under elevated power conditions
Author
Ketcham, R.S. ; Kline, G.R. ; Lakin, K.M.
Author_Institution
Microelectron. Res. Center, Iowa State Univ., Ames, IA, USA
fYear
1988
Firstpage
106
Lastpage
111
Abstract
Research into the application of thin-film piezoelectric resonator (TFR) technology in novel monolithic bandpass filtering devices is reported. Research into the performance of TFR-based filters under elevated power levels was initiated to assess the suitability of this technology in systems requiring ultraminiature transmit and transceiver functions. Characteristics of particular interest include the 1-dB compression point and the two-tone third-order intercept point. The results of research conducted on silicon-based TFR bandpass filter devices under elevated power conditions are presented
Keywords
band-pass filters; crystal resonators; 1-dB compression point; TFR filters; crystal resonator; monolithic bandpass filtering devices; thin-film piezoelectric resonator; transceiver; two-tone third-order intercept point; Band pass filters; Channel bank filters; Electrodes; Filter bank; Network synthesis; Piezoelectric films; Power filters; Resonator filters; Silicon; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium, 1988., Proceedings of the 42nd Annual
Conference_Location
Baltimore, MD
Type
conf
DOI
10.1109/FREQ.1988.27590
Filename
27590
Link To Document