Dynamic oxide current relaxation spectroscopy for thin insulator MOS structure under Fowler-Nordheim stresses

Author

Xu, Mingzhen ; Tan, Changhua ; He, Yandong ; Liu, Xiaowei ; Chen, Zhiyun ; Duan, Xiaorong ; Wang, Yangyuan

Author_Institution

Inst. of Microelectron., Beijing Univ., China

fYear

1995

Firstpage

85

Lastpage

89

Abstract

A new method is presented for separating and characterizing interface and oxide traps generated in an MOS structure under Fowler-Nordheim stress. The oxide trap relaxation measurement performed in dynamic voltage mode can determine the density, centroid, and generation/capture cross-section of the oxide traps without the double current-voltage technique. Analytical expressions for computing the interface and oxide traps are derived and experimental results are presented. Two interface and two oxide traps generated under Fowler-Nordheim stress are obtained by the new technique

Keywords

MIS structures; MOSFET; defect states; interface states; tunnelling; Fowler-Nordheim stresses; LOCOS isolation; MOSFET subthreshold characteristics; Si-SiO₂; dynamic oxide current relaxation spectroscopy; dynamic voltage mode; interface trap characterization; oxide trap relaxation measurement; thin insulator MOS structure; trap capture cross-section; trap centroid; trap generation; Character generation; Current measurement; Density measurement; Electron traps; Electrooptic effects; Equations; Insulation; Spectroscopy; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.499278

Filename

499278