100 mW high-power angled-stripe superluminescent diodes with a new real refractive index guided self-aligned structure

We have developed for the first time 100 mW high-power angled-stripe superluminescent diodes with a new real refractive index guided self-aligned structure. The structure has a GaAlAs optical confinement layer on a planar active layer and an inclined current injection stripe by 5° with respect to the facets. That gives small internal loss (~10 cm^-1) and facet power reflectivity less than the order of 10^-6. As a result, the output power as high as 105 mW at a low operating current of 270 mA is obtained with less than 3% spectral modulation and 10.5 nm full width at half maximum spectral width