DocumentCode
1656508
Title
Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS compatible integration
Author
Ding, Jianfeng ; Chen, Hongtao ; Yang, Lin ; Zhang, Lei ; Ji, Ruiqiang ; Tian, Yonghui ; Zhu, Weiwei ; Lu, Yangyang ; Zhou, Ping ; Min, Rui
Author_Institution
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We demonstrate a carrier-depletion optical modulator with the driving voltage swing of 2 V and the extinction ratio of 12.79 dB at 12.5 Gbit/s. Even the driving voltage is reduced to 1 V, the the device still has an extinction ratio of 7.67 dB.
Keywords
CMOS integrated circuits; Mach-Zehnder interferometers; electro-optical modulation; integrated optoelectronics; silicon; CMOS compatible integration; Mach-Zehnder silicon optical modulator; bit rate 12.5 Gbit/s; carrier depletion optical modulator; extinction ratio; voltage 1 V; voltage 2 V; High speed optical techniques; Optical device fabrication; Optical modulation; Optical polarization; Optical waveguides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6325769
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