High efficient self-assembly CdSe/ZnS quantum dots light-emitting devices in organic matrix

Author

Uddin, A. ; Teo, C.C.

Author_Institution

Sch. of Photovoltaic & Renewable Energy Eng., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2010

Firstpage

750

Lastpage

751

Abstract

We have fabricated and investigated the effect of CdSe/ZnS quantum dot (QD) concentrations on self-assembly hybrid organic/inorganic light emitting diodes (QD-OLEDs). The uniform distribution of QDs with controllable density was achieved using the conventional spin-coating method. There was a QD threshold concentration below which there was no emission from the QDs. The estimated QD concentration was around 9 Ã— 10¹¹ cm^-2 for the best performance of QD-OLED. The QD emission was increased about three times by annealing of QD-OLED.

Keywords

II-VI semiconductors; annealing; cadmium compounds; light emitting diodes; organic-inorganic hybrid materials; self-assembly; semiconductor quantum dots; spin coating; wide band gap semiconductors; zinc compounds; CdSe-ZnS; annealing; hybrid organic-inorganic light emitting diodes; quantum dots; self-assembly; spin coating; threshold concentration; Active matrix organic light emitting diodes; Annealing; Chemicals; Inorganic light emitting diodes; Luminescence; Organic light emitting diodes; Quantum dots; Self-assembly; Surface topography; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424530

Filename

5424530