DocumentCode
1657310
Title
Extended study of crosstalk in SOI-SIMOX substrates
Author
Viviani, A. ; Raskin, J.P. ; Flandre, D. ; Colinge, J.P. ; Vanhoenacker, D.
Author_Institution
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
fYear
1995
Firstpage
713
Lastpage
716
Abstract
This work analyzes crosstalk phenomena in SOI-SIMOX substrates by means of two-dimensional device simulations and measurements on test structures. The influence of the substrate resistivity and of guard rings is studied. The results are compared with those obtained for standard CMOS technology. A significant crosstalk reduction, up to 10 GHz, is obtained with high-resistivity substrates. A simple modeling is proposed to explain and simulate the phenomenon
Keywords
MOS integrated circuits; SIMOX; crosstalk; integrated circuit modelling; integrated circuit testing; mixed analogue-digital integrated circuits; MOS integrated circuits; SOI-SIMOX substrates; crosstalk; guard rings; mixed-mode ICs; substrate resistivity; test structure measurements; two-dimensional device simulations; Analytical models; CMOS technology; Conductivity; Crosstalk; Frequency; Integrated circuit noise; Measurement standards; Microwave devices; Substrates; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499318
Filename
499318
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