DocumentCode
1657605
Title
Monte Carlo simulation of electron transport in strained Si/Si1-xGex n-MOSFETs
Author
Rashed, Mahbub ; Shih, W.K. ; Jallepalli, S. ; Kwan, T.J.T. ; Maziar, C.M.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
1995
Firstpage
765
Lastpage
768
Abstract
Electron transport in the inversion layer of strained-silicon-channel n-MOSFETs is investigated using a Monte Carlo (MC) tool that takes into account the 2D nature of the electron gas. The subband structure is calculated using a bulk nonparabolic E-K relation, E(K)(1+αE(M))=γbulk(K), where α is the nonparabolicity coefficient. Single particle MC simulations are performed at room temperature by solving a 2D multi-subband BTE. The scattering mechanisms include phonon, surface roughness and alloy scattering. Agreement between calculated and experimental enhancement of effective mobility is presented
Keywords
Ge-Si alloys; MOSFET; Monte Carlo methods; carrier mobility; elemental semiconductors; impurity scattering; inversion layers; semiconductor device models; semiconductor materials; silicon; surface topography; two-dimensional electron gas; 2D electron gas; 2D multi-subband BTE; Monte Carlo simulation; Si-SiGe; alloy scattering; bulk nonparabolic E-K relation; electron transport; inversion layer; nonparabolicity coefficient; scattering mechanisms; single particle MC simulations; strained-silicon-channel n-MOSFETs; subband structure; surface roughness; Carrier confinement; Electron mobility; Germanium alloys; Germanium silicon alloys; MOS devices; MOSFET circuits; Particle scattering; Phonons; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499330
Filename
499330
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