DocumentCode
1657701
Title
High power AlGaAs/GaAs HBTs and their application to mobile communications systems
Author
Yoshimasu, Toshihiko
Author_Institution
New Device Promotion Center, Sharp Corp., Nara, Japan
fYear
1995
Firstpage
787
Lastpage
790
Abstract
This paper addresses the power application of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) to L-band mobile communications systems. From points of view of circuit and systems design, features of HBT technology are discussed and compared with those of GaAs MESFET technology
Keywords
III-V semiconductors; UHF bipolar transistors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; mobile communication; power bipolar transistors; AlGaAs-GaAs; L-band; circuit design; mobile communications systems; power HBTs; systems design; Current density; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Knee; MESFETs; Mobile communication; Power amplifiers; Telephone sets; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499335
Filename
499335
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