• DocumentCode
    1657886
  • Title

    Hydrogen passivation effects on performance of visible thin-film light-emitting diodes (TFLEDs)

  • Author

    Lee, Jong-Wook ; Hur, Sung-Hoi ; Lim, Koeng Su

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
  • fYear
    1995
  • Firstpage
    825
  • Lastpage
    828
  • Abstract
    The effects of hydrogen passivation on the performance of visible thin-film light-emitting diodes (TFLEDs) have been investigated. The TFLED with hydrogen passivation exhibits lower threshold voltage (by about 3 V), higher brightness (about 33 times), and much shorter electroluminescence (EL) peak wavelength (from 704.5 nm to 600 nm) and higher EL intensity than that without hydrogen passivation
  • Keywords
    brightness; electroluminescence; light emitting diodes; passivation; 600 to 704.5 nm; EL intensity; H2; brightness; electroluminescence peak wavelength; passivation effects; threshold voltage; visible thin-film light-emitting diodes; Brightness; Circuits; Hydrogen; Light emitting diodes; PIN photodiodes; Passivation; Photonic band gap; Semiconductor thin films; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499344
  • Filename
    499344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1657886